The world's fastest DRAM reaches 800 MHz

The product that Korean semiconductor company Hynix has just introduced is the first device in the world to be built with 60 nm technology (nanometer). This technique allows a DRG price reduction of 1 Gb to 50% compared to 80 nm technology.

The above memory uses "3-way" and "3-layer metal" technologies, runs fast, supports high-speed data transmission and enhances storage capacity.

The new production process will be rolled out in the first half of next year, and Hynix plans to continue upgrading to apply for higher density storage DRAM components in the future, besides high-performance products. like DRAM for graphics and for mobile devices.