Transform graphene material into semiconductor

Physicists at the Massachusetts Institute of Technology have found a way to turn graphene into semiconductors by giving it exposure to a boron nitride substrate.

In the experiment, relatively large-sized carbon nanotubes were coated on the nitrile boron substrate. The phenomenon is due to the dielectric properties of the substrate converting part of graphene to conductive materials.

Picture 1 of Transform graphene material into semiconductor
Group of physicists who study how to make graphene into a semiconductor at MIT.

At this point in the graphene there will appear a forbidden zone - the area of energy that carbon electrons do not reach. This area becomes a semiconductor, but separating it from the graphene, for example, to create thin strips of material for use with them is extremely difficult.

The study demonstrates that the properties of graphene when exposed to boron nitride will vary depending on the angle of intersection with its lattice. It is likely that this will lead to the creation of a series of pairs of different electronic properties.

The size of the banned area is not enough to use these 'buns' in the electronics industry. However, the authors hope to increase the area of these restricted areas in the near future.

Graphene is one of the most promising materials in the electronics industry. More recently, another team of researchers has found a way to make magnetic graphene. This could lead to the development of graphene-based spintronics.

The work is published in the journal Science and is available online at the Institute's website.