Japan produces one atomic silicon film

Hokuriku University, Japan, on May 30, said the research team has developed Silicene technology to produce large-area silicon films.

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This type of membrane is one atom thick, characterized by semiconductor and can be used to make high-speed electronic circuits.

The team coated the ceramic membrane on a 2 cm long silicon substrate surface, 1 cm wide, then heated to 900 degrees Celsius in a special vacuum environment.

As a result, the silicon elements present in the silicon substrate penetrate and appear on the membrane surface, forming silicon films. Larger substrates will be able to produce larger silicon films.

Only graphene with a thickness of 1 carbon atom is the thinnest material known in the world today. Its inventor won the 2010 Nobel Prize in physics for its magical properties.

Silicene is considered as silicon version graphene and attracts much attention in physics.

University professor Komura Yukiko said the next challenge was to shed light on the mechanism of silicene formation and to develop a technology to remove this film from the substrate.