Flash and DRAM memory ... out of date

Intel and ST Microelectronics are currently working together to develop a new type of memory that can replace flash dynamic memory and DRAM.

The pair of chip makers is expected to jointly publish documents about the phase change memory (PCM), also known as the PRAM and Ovonic Unified Memory, at VLSI technology seminar will be held later this month.

Intel and ST Microelectronics are also collaborating on several areas such as NOR dynamic memory. However, in the field of PCM the two companies conduct independent research. ST has successfully produced a test version of 128Mbit PCM using the 90-nanometer technology line and is aiming to produce PCM with higher speeds using 45 or 32-nanometer technology.

Expected in the PCM documentation, Intel and ST will announce what they consider to be promising results using 90-nanometer technology.

PCM is non-volatile memory. This means that the data will be kept even when the power is cut. PCM operates based on a volume of chalcogenide - a type of memory material that can be replaced by heat structure generated by a tightly controlled power source.

Heat can transform chalcogenide material into a crystalline form or into a non-shaped state. Each state of this material is equivalent to a state of storing a separate charge - in other words, the two states represent two binary numbers "0 and 1", in which the amorphous state represents 1 and the crystal form is 0.

Chalcogenide is the material used in optical discs that can be recorded. In this case, the laser light will replace electricity to create different states of the material.

The type of material that has been known for electricity since the 1960s. However, the introduction of commercial production has encountered great obstacles by some problems such as quality of materials and energy consumption.

Both Intel and ST are very interested in PCM because it can be a kind of memory capable of replacing flash memory chip and DRAM technology.

Hoang Dung