The first flash memory based on 50 nm technology

Intel and Micron Technology are experimenting with 4 Gigabit (Gb) NAND flash devices that are formed on the most advanced technology line today and are expected to be mass-produced in 2007.

Converting to 50 nanometer (nm) technology, Intel and Micron will meet the growing demand for high-density NAND flash for consumer electronics and computing applications such as music players, storage products. Removable capabilities and portable communication devices. Experts predict that NAND market will reach 13-16 billion USD this year and increase to approximately 25-30 billion USD in 2010.

" Micron entered this market two years ago and used 90 nm technology. After only a short time and thanks to the collaboration with Intel, we are ready to launch a leading product based on the method. The most advanced processing, "said Brian Shirley, Micron's vice president of memory products. " Micron will continue the transition to 50 nm lines and develop new technologies to introduce even more dense products ."

Meanwhile, Intel vice president Brian Harrison also expressed satisfaction that the group has achieved a surprisingly rapid development in the NAND flash market, led by Samsung.

Micron is one of the world's leading semiconductor solution providers. The company has launched DRAM products, NAND flash memory, CMOS image sensor chips . Micron and Intel have just established IM Flash Technologies (IMFT) specializing in NAND memory production in January / 2006 but quickly expanded production facilities in Boise, Virgina . in the US.