Develop technology for manufacturing semiconductor nano 10

Nihon Keizai of Japan reported that South Korean electronics company Samsung and Toshiba of Japan together with Intel of the US and a number of other companies have jointly embarked on an international research project to develop technology. New generation semiconductor manufacturing.

This project will last until 2016 and is carried out at the Japan Research Development Center located in Tsukuba City in Ibaraki Prefecture.

24-nm SmartNAND memory.

The goal of the joint study this time is to try to narrow down to about 10 nm, which is equivalent to reducing over half the size of the best current semiconductor circuit but will expand to semiconductor memory capacity.

Predictably, if this nano-10 technology is successfully developed, the semiconductor memory capacity can be increased three times compared to the current memory, which means it can hold 100 episodes, but click Its size will be reduced to just a small stamp.

Samsung and Toshiba also argue that nanotechnology 10 can be applied in NAND flash memory for applications in information technology products such as mobile phones.