Transisor is 50 times faster than silicon transistors

US scientists claim the new transistor production method is paving the way for a flexible electronic era, accelerating the process of developing roll screens and electronic paper in the world.

According to Zhenqiang Ma, head of transistor research at the University of Wisconsin in Madison (USA), the technology used in electronic paper now depends on transistors made of amorphous or amorphous silicon compounds. However, these transistors cannot reach gigahertz speeds for complex circuits.

Photo: TechnologyReview Ma's team put high quality single crystal silicon on a flexible plastic substrate. Although single silicon is usually hardened, it can still bend if rolled thin enough to make transistors 50 times faster than conventional silicon transistors.

The method of tensioning the crystal structure is technically used by Intel and many chip manufacturers. But according to Zhenqiang Ma, "the flexibility of electrons is not synonymous with the device speed" but it depends on the electrical resistance of the contact - the point on the transistor where the electron enters and exits the device.

Zhenqiang Ma separated the thin silicon film and attached it to the plastic substrate through an epoxy layer to keep them together. The material of the connection port - the position on the transistor, which is on / off the current - is not made of silicon dioxide as before but is the silicon monoxide because it is thinner.

During the latest test, the transistor's speed reached 3.1 GHz. Scientists in Wisconsin confirmed at the time of the next announcement, the transistor would reach 7.8 GHz, then 20 GHz.